Speaker
Description
TlBr (thallium bromide) is one of the materials used in semiconductor detectors.
Due to its characteristics, it is generally being researched as a semiconductor detector for
high-energy X-rays that can operate at room temperature, but it suffers from low carrier
mobility and a reduction in energy resolution due to signal rise time. Therefore, we will
consider fabricating a semiconductor detector using thin film TlBr. By making the film thin,
it is possible to compensate for the low carrier mobility. Making it a thin film allows high-
energy X-rays to easily pass through it, but TlBr has a characteristic of having a high mass
attenuation coefficient in the low energy band, so we are considering creating a
semiconductor detector for low energy use.
This time, in order to investigate the relationship between changes in substrate temperature
and crystallinity when depositing a thin film of TlBr, we prepared two samples, one without
heating the substrate and one with heating the substrate to 150℃, and each X-ray diffraction
measurements were performed. As a result, it was confirmed that crystal orientation improved
when the substrate temperature was increased.
| Topics | Session A. Physics of condensed matter and spectroscopy |
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