Conveners
Plenary
- Serhiy Kondratenko (Taras Shevchenko National University of Kyiv, Faculty of Physics, Chair of Optics)
The subthreshold swing S is a fundamental characteristic of MOSFET transistors [1]. It shows how many times the gate voltage Vg must be increased in the subthreshold range in order to achieve an increase in the drain current Id by an order of magnitude: $S \equiv \ln(10) \frac{dV_g}{d\ln(Id)}$.At room temperature in a high-quality transistor with a large value of sub-gate capacitance, the...
Raman spectroscopy is a fast, sensitive, and non-destructive technique for characterization of structure, phonon spectrum and even some electronic properties of semiconductors and isolators. In exploring semiconductor nanostructures and heterostructures, this technique benefits from possibility to tune the excitation wavelength to selectively excite parts of the material with different...
