Speaker
Gandzyuk
(Taras Shevchenko National University of Kyiv)
Description
Voltage oscillations that arise when high-density currents flow through silicon with dielectric isolation (SDI) structure have been obtained and investigated. The investigations have been conducted in pulsed mode. Volt-ampere characteristics of SDI structure and distinctive parameters of oscillograms for both relaxation and quasi-harmonic oscillations have been studied. We have proposed a model to show how the voltage oscillations have been arising.
Primary authors
Mr
S Pavlyuk
(Taras Shevchenko National University of Kyiv)
Prof.
Valerii Grygoruk
Volodymyr Telega
Mr
Petrychuk
(Taras Shevchenko National University of Kyiv)
Mr
Ivanchuk
(Taras Shevchenko National University of Kyiv)
Gandzyuk
(Taras Shevchenko National University of Kyiv)
