XVIII International Young Scientists' Conference on Applied Physics

Metal Assisted Chemical Etching for Silicon Nanowires Formation

Not scheduled

15m

Faculty of Radio Physics, Electronics and Computer Systems

Poster Surface Physics and Nanoelectronics

Speaker

Mr Dmytro Kulish

Description

Іn this work the silicon nanopillars were produced by means of metal assisted chemical etching in two stages. It was determined that using the amount of AgNO3 of 68 mg in the first solution and the duration of the first stage of 20 sec made possible to reduce the sunlight reflection of silicon substrate from 20-30% to 10-12%.