Speaker
Oleksandr Zadorozhnyi
Description
In this paper c-Si/nc-SiOx heterostruсture photovaractors were synthesized by means of RF magnetron sputtering method. Influence of illumination and deposition temperature of silicon on electrical and optical properties of photovaractors were studied. Under illumination conditions the output capacitance of photovaractors was increased by 7 times. Overlap ratio for these structures was in a range of 20 – 25.
