Speaker
Dr
Iryna Gavrylchenko
(Institute of High Technologies, Taras Shevchenko National University of Kyiv, )
Description
Freestanding porous silicon carbide (PSiC) was synthesized via electrochemical etching of silicon carbide (3C-SiC). The surface morphology of PSiC has been studied using scanning electron microscopy (SEM).The electrical properties of porous SiC structures were investigated using impedance measurements in dry air and in saturated vapor of ethanol.
Primary authors
Dr
Iryna Gavrylchenko
(Institute of High Technologies, Taras Shevchenko National University of Kyiv, )
Dr
Yurii Milovanov
(* Institute of High Technologies, Taras Shevchenko National University of Kyiv)
Mrs
Olha Filimonova
Mrs
Valentyna Tyschenko
Mrs
Iryna Vlasenko
Prof.
Valeriy Skryshevsky
Dr
Sergey Alekseev
