XVIII International Young Scientists' Conference on Applied Physics

Name: XVIII International Young Scientists' Conference on Applied Physics
Start: 2018-05-22T09:00:00+03:00
End: 2018-05-26T18:00:00+03:00
Location: Faculty of Radio Physics, Electronics and Computer Systems

22-26 May 2018

Faculty of Radio Physics, Electronics and Computer Systems

Europe/Kiev timezone

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frecs.conf.icap@gmail.com
(+380)44-521-35-90

ION IMPLANTATION STUDY OF Be IN InSb FOR PHOTODIODE FABRICATION

Not scheduled

15m

Faculty of Radio Physics, Electronics and Computer Systems

Faculty of Radio Physics, Electronics and Computer Systems of Taras Shevchenko National University of Kyiv, acad. Glushkov ave., 4g, Kyiv, Ukraine

Poster Physics of Semiconductors and Dielectrics, Semiconductor’s Devices

Mr Hlib Shymko (NTUU “Igor Sikorsky Kyiv Polytechnic Istitute”)

Ion implantation of Be in semiconductor material InSb to create semiconductor diveces, like a photodiode. Process of forming doped by Be monocrystal InSb.

Mr Hlib Shymko (NTUU “Igor Sikorsky Kyiv Polytechnic Istitute”)

ION IMPLANTATION STUDY OF Be IN InSb FOR.pdf

XVIII International Young Scientists' Conference on Applied Physics

Organizing committee

ION IMPLANTATION STUDY OF Be IN InSb FOR PHOTODIODE FABRICATION

Faculty of Radio Physics, Electronics and Computer Systems

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