Speaker
Mrs
Maria Sadovnikova
(Taras Shevchenko National University of Kyiv)
Abstract
The work shows the spalling of single-crystal Si, caused by electrolytic saturation with Hydrogen. Electrolytic saturation of Si samples with Hydrogen was carried out after irradiation with H + ions. The electrolytical saturation by Hydrogen was carried out after irradiation by H+ ions . The electrolysis carried out in H2SO4 water solution. By electrolytical Hydrogen saturation the Si surface spalling was observed. SEM photos of the samples after irradiation before and after electrolysis confirm that spallation occurs along the layer with the highest hydrogen concentration.
Primary authors
Dr
Anatoliy Vasiljev
(Taras Shevchenko National University of Kyiv)
Mrs
Maria Sadovnikova
(Taras Shevchenko National University of Kyiv)
Mr
Anatoliy Zhuravel
(Taras Shevchenko National University of Kyiv)
Mr
Oleksandr Kozonushchenko
(Taras Shevchenko National University of Kyiv)
Dr
Anatoliy Vdovenkov
(Taras Shevchenko National University of Kyiv)
Dr
Mykola Tolmachov
(Company «Т.М.М.» Limited)
Mr
Oleh Kukharenko
(Taras Shevchenko National University of Kyiv)
