23-26 October 2018
Faculty of Radio Physics, Electronics and Computer Systems
Europe/Kiev timezone

ALUMINUM NITRIDE FILMS AS AN EFFECTIVE THERMO-INTERFACE FOR POWERFUL SEMICONDUCTOR DEVICES

Not scheduled
15m
Faculty of Radio Physics, Electronics and Computer Systems

Faculty of Radio Physics, Electronics and Computer Systems

Faculty of Radio Physics, Electronics and Computer Systems of Taras Shevchenko National University of Kyiv, acad. Glushkov ave., 4g, Kyiv, Ukraine
Poster Surface Physics, Nano- and Microelectronics Surface Physics, Nano- and Microelectronics

Speaker

Maxim Dyakin (G.V. Kurdyumov Institute for Metal Physics)

Abstract

Highly efficient thermal interface materials (TIM) have been created using thin films of aluminum nitride (AlN) and were studied with the aim to remove heat from high-power light emitting diodes (LEDs). The experimental results for comparative tests of our, AlN-based TIM and industrial TIM in high-power (3 W) LED assemblies are presented.

Primary author

Prof. Eduard Rudenko (G.V. Kurdyumov Institute for Metal Physics)

Co-authors

Dr Igor Korotash (G.V. Kurdyumov Institute for Metal Physics) Maxim Dyakin (G.V. Kurdyumov Institute for Metal Physics) Dr Anatolij Krakovny (G.V. Kurdyumov Institute for Metal Physics) Denis Polockiy (G.V. Kurdyumov Institute for Metal Physics)

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