Speaker
Dr
S Pavlyuk
(Taras Shevchenko National University of Kyiv)
Abstract
By means of the method of volt-ampere characteristics, we have investigated the flow of a current pulse with a density of 105 A/cm2 through a directly biased p-n junction of the field effect transistor. Using a special current generator, a transistor in the forward direction relative to the p-n junction was subjected to a single rectangular current pulse. The I(V) characteristics with an S-shaped region was obtained.
Primary authors
Prof.
Valerii Grygoruk
(Taras Shevchenko National University of Kyiv)
Dr
S Pavlyuk
(Taras Shevchenko National University of Kyiv)
Dr
Volodymyr Telega
(Taras Shevchenko National University of Kyiv)
Dr
M Petrychuk
(Taras Shevchenko National University of Kyiv)
Dr
A Ivanchuk
(Taras Shevchenko National University of Kyiv)
Dr
V Malyshev
(Taras Shevchenko National University of Kyiv)
