Speaker
Dr
Yuriy Hizhnyi
(Taras Shevchenko National University of Kyiv)
Abstract
The set of pure and doped with aluminum and tellurium ZnSe crystals were grown by the Bridgman method. The studied samples under X-ray and photoexcitation reveal visible luminescence related with excitons and emission centers created on the base of zinc and selenium vacancies. The electronic band structures of ideal and defect-containing crystals were calculated by the Full-Potential Linear Augmented Plane Wave (FLAPW) method. The Al and Te dopants have different impact on band edges regions of ZnSe electronic structure.
Primary authors
Dr
Yuriy Hizhnyi
(Taras Shevchenko National University of Kyiv)
Dr
Serhii Nedilko
(Taras Shevchenko National University of Kyiv)
Dr
Viktor Borysiuk
(Taras Shevchenko National University of Kyiv)
Dr
Vitalii Chornii
(National University of Life and Environmental Sciences of Ukraine)
Dr
I. Tupitsyna
(Institute for Scintillation Materials NAS of Ukraine)
Dr
S. Galkin
(Institute for Scintillation Materials NAS of Ukraine)
Dr
I. Rybalka
(Institute for Scintillation Materials NAS of Ukraine)
