24-27 October 2017
Faculty of Radio Physics, Electronics and Computer Systems
Europe/Kiev timezone

INFLUENCE OF THE STRUCTURE TYPE ON THE GRAIN-BOUNDARY ENERGY OF SILICON FILMS

Not scheduled
15m
Faculty of Radio Physics, Electronics and Computer Systems

Faculty of Radio Physics, Electronics and Computer Systems

Faculty of Radio Physics, Electronics and Computer Systems of Taras Shevchenko National University of Kyiv, acad. Glushkov ave., 4g, Kyiv, Ukraine
Poster Surface Physics, Nano- and Microelectronics

Speaker

Dr Tatyana Rodionova (Kiev National Taras Shevchenko University,)

Description

The relative grain-boundary energy of silicon films with equiaxed, dendritic and fibrous structure was determined by the method of grain boundary grooves with the use of atomic force microscopy. It was shown that undoped films with a dendritic structure possess the lowest relative grain-boundary energy; the largest relative energy was observed in fibrous structure. Annealing leads to the structure relaxation in phosphorus-doped dendritic silicon films.

Primary author

Dr Tatyana Rodionova (Kiev National Taras Shevchenko University,)

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